Author : Akarsha Kadadevaramath 1
Date of Publication :25th May 2018
Abstract: Aluminum Nitridation (AlN) has lot many applications in the automobile industry, aerospace, electronics where a high temperature application is required and other areas. There are various techniques, methods and approaches are used by various researchers in this area. Hence, this article presents a brief review of the research progress achieved on Preparation and feasibility formation mechanism in the field of Aluminum Nitride (AlN) and proposes the research objective and frame work developed for Aluminum Nitride formation for electronic industry applications.
Reference :
-
- R.A. Shishkin, A.A. Elagin, E.S. Mayorova, A.R. Beketov, The advanced aluminum nitride synthesis methods and its applications: patent review, Recent Pat. Nanotechnology. 10 (2016).
- Z. Lin, L. Rui, S. Chunhui, G. Longjiang, Preparation method of AlN powder, Patent CN103771360 (2014).
- C. Shi, Nano aluminum nitride LED (light-emitting diode) heat dissipation paint and preparation method, Patent CN103881545 (2014).
- Chen Jian, Zheng Xiaoping, Tong Yuzhen, Aluminum nitride Chip On Board(COB) light-emitting diode (LED) light source and packaging method, PatentCN103730565 (2014).
- S. Shu-meng, Y. Li, B. Xia, Aluminum nitride sintering auxiliary agent and preparation method thereof as well as preparation method of aluminum nitride ceramic substrate, Patent CN104072158 (2014).
- Paduano, Q.S., et al., Effect of initial process conditions on the structural properties of AlN films. Journal of Crystal Growth, 2004. 261(2–3): p. 259-265.